GaAs low-high doped MESFET MMIC power amplifier for CDMA/AMPS dual-mode cellular telephone

Electronics Letters

Volumn 32, Issue 20, 1996, Pages 1928-1929

  Roh, T M ^a   Suh, Y ^b   Kim, B ^a   Park, W ^a   Lee, J B ^c   Kim, Y S ^c   Lee, G Y ^c  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Yeungnam University   (South Korea)

^c Samsung Microwave Semiconductor   (United States)

Author keywords

Cellular radio; Code division multiple access; Gallium arsenide; MESFET; MM1C; Power amplifiers

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; DESIGN; MESFET DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SCHEMATIC DIAGRAMS; SEMICONDUCTING GALLIUM ARSENIDE;

AMPS OPERATION; CODE DIVISION MULTIPLE ACCESS;

POWER AMPLIFIERS;

EID: 0030235617     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961280     Document Type: Article

References (6)

1. MASATO, H., MEADA, M., FUJIMOTO, H., MORIMOTO, S., and NAKAMURA, M.: 'Analogue/digital dual power module using ion-implanted GaAs MESFETs' IEEE MTT-S Int. Microw. Symp. Dig., 1995, Vol. 2, pp. 567-570
2. 'RI21002 CDMA/TDMA HBT power amplifier datasheet' (Rockwell, 1995)
3. CARDULLO, M., DOUGLAS. E., GOFF, M., GRIFFITHS, J., HARRINGTON, K., KAISER, J., LESAGE, S., and PENGELLY, R.: 'Transmitter chips for use in a dual-mode AMPS/CDMA chip set', Microw. J., 1996, 39, (3), pp. 60-72
4. BOUTHILLETTE, S., and PLATZKER, A.: 'High efficiency L-band variable output power amplifiers for use in communication system'. IEEE MTT-S Int. Microw. Symp. Dig., 1996, Vol. 2, pp. 563-566
5. ONO, H., UMEMOTO, Y., MORI. M., MIYAZAKI, M., TERANO, A., and KUDO, M.: 'Pseudomophic power HEMT with 53.5% power-added efficiency for 1.9-GHz PHS standards'. IEEE MTT-S Int. Microw. Symp. Dig., 1996, Vol. 2, pp. 547-550
6. LEE, J.L., KIM, H., MUN, J.K., KWON, O., LEE, J.J., PARK, H.M., and PARK, S.C.: '3.3V operation GaAs power MESFET with 65% power-added efficiency for hand-held telephone', Electron. Lett., 1994, 30, (9), pp. 739-740