Hydrogen-sensitive breakdown voltage in the I-V characteristics of tin dioxide-based semiconductors

Sensors and Actuators, B: Chemical

Volumn 33, Issue 1-3, 1996, Pages 89-95

  Egashira, Makoto ^a   Shimizu, Yasuhiro ^a   Takao, Yuji ^a   Fukuyama, Youichi ^a  

^a NAGASAKI UNIVERSITY   (Japan)

Author keywords

Breakdown voltage; H2 sensor; I V characteristics; Tin dioxide; Varistor

Indexed keywords

EID: 0042285071     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-4005(96)01931-4     Document Type: Article

References (8)

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