A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation

Sensors and Actuators, A: Physical

Volumn 56, Issue 3, 1996, Pages 267-271

  Pak, James J ^a,c   Kabir, Abul E ^a,d   Neudeck, Gerold W ^a   Logsdon, James H ^b  

^a PURDUE UNIVERSITY   (United States)

^b DELPHI CORPORATION   (United States)

^c Korea University   (South Korea)

^d NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

Merged epitaxial lateral overgrowth; Piezoresistive accelerometers; Silicon beams

Indexed keywords

EPITAXIAL GROWTH; ETCHING; PIEZOELECTRIC DEVICES; PIEZOELECTRICITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THIN FILMS;

MERGED EPITAXIAL LATERAL OVERGROWTH (MELO) SILICON; NEAR PERFECT BACKSIDE ETCH STOP SILICON MEMBRANE; SILICON BEAMS;

ACCELEROMETERS;

EID: 0030233870     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(96)01319-2     Document Type: Article

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