A 2-D Analytic Model for the Threshold-Voltage of Fully Depleted Short Gate-Length Si-SOI MESFET's

IEEE Transactions on Electron Devices

Volumn 42, Issue 12, 1995, Pages 2156-2162

  Hou, Chin Shan ^b   Wu, Ching Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; GATES (TRANSISTOR); GREEN'S FUNCTION; MATHEMATICAL MODELS; SILICON ON INSULATOR TECHNOLOGY;

DRAIN INDUCED BARRIER LOWERING EFFECT; POISSON'S EQUATION; POTENTIAL DISTRIBUTION; THRESHOLD VOLTAGE;

MESFET DEVICES;

EID: 0029489922     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.477774     Document Type: Article

References (8)

1. C. A. Mead, “Schottky barrier gate field effect transistor,” Proc. IEEE, vol. 54, p. 307, 1966.
2. W. W. Hooper and W. I. Lehrer, “An epitaxial GaAs field effect transistor,” Proc. IEEE, vol. 55, p. 1237, 1967.
3. G. V. Ram and M. I. Elmasry, “On the scaling of Si-MESFET's,” IEEE Electron Device Lett., vol. EDL-1, p. 259, 1980.
4. G. Bert et al., “Femto Joule logic circuits using normally of GaAs MESFET,” Electron Lett., vol. 13, p. 644, 1977.
5. J. Y. Guo and C. Y. Wu, “A new 2-D analytic threshold-voltage model for fully depleted short-channel SOI MOSFET's,” IEEE Trans. Electron Devices, vol. 40, p. 1653, 1993.
6. P. S. Lin and C. Y. Wu, “A new approach to analytically solving the two-dimensional Poisson's equation and its application in short-channel MOSFET modeling,” IEEE Trans. Electron Devices, vol. ED-34, p. 1 947, 1987.
7. P. S. Lin and C. Y. Wu, “A new two-dimensional model for the potential distribution of short gate length MESFET's and its applications,” IEEE Trans. Electron Devices, vol. 39, p. 1928, 1992.
8. P. S. Lin and C. Y. Wu, “A new methodology for two-dimensional numerical simulation of semiconductor devices,” IEEE Trans. Computer-Aided Des., vol. 11, p. 1508, 1992.