Growth of GaAs on Si by using a thin Si film as buffer layer

Chinese Physics Letters

Volumn 13, Issue 1, 1996, Pages 42-45

  Hao, Mao Sheng ^a   Liang, Jun Wu ^a   Jin, Xiao Jun ^a   Wang, Yu Tian ^a   Deng, Li Sheng ^a   Xiao, Zhi Bo ^a   Zheng, Lian Xi ^a   Hu, Xiong Wei ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; FILM GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING GALLIUM;

AMORPHOUS SI FILMS; FULL WIDTHS AT HALF MAXIMUMS; GAAS ON SI; GAAS-ON-SI SUBSTRATE; HIGH CRYSTALLINITY; HIGH QUALITY; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; NOVEL TECHNIQUES; SI-FILMS; TWO-STEP GROWTH;

GALLIUM ARSENIDE;

EID: 0030508518     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/13/1/012     Document Type: Article

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