Responsivity enhancement of InGaAs based MSM photodetectors using 2DEG layer sequence and semitransparent electrodes

Electronics Letters

Volumn 32, Issue 17, 1996, Pages 1613-1615

  Horstmann, M ^a   Marso, M ^a   Muttersbach, J ^a   Schimpf, K ^a   Kordos P ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Metal semiconductor metal structures; Photodetectors

Indexed keywords

BANDWIDTH; CAPACITANCE; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRODES; PHOTOCONDUCTING DEVICES; PHOTOCONDUCTING MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES;

METAL SEMICONDUCTOR METAL PHOTODETECTORS (MSMPDS); TWO DIMENSIONAL ELECTRON GAS;

PHOTODETECTORS;

EID: 0030212674     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961083     Document Type: Article

References (7)

1. KIM, J.H., GRIEM, H.T., FRIEDMAN, R.A., CHAN, E.Y., and RAY, S.: 'High-performance back-illuminated InGaAs/InAlAS MSM photodetector with record responsivity of 0.96A/W', IEEE Photonics Technol. Lett., 1992, 4, (11), pp. 1241-1244
2. GAO, W., KHAN, A., BERGER, P.R., HUNSPERGER, R.G., ZYZIK, G., O'BRIEN, H.M., SIVCO, D., and CHO, A.Y.: 'InGaAs metal-semiconductor-metal photodiodes with transparent cadmium tin oxide Schottky-contacts', Appl. Phys. Lett., 1994, 65, (15), pp. 1930-1932
3. ADESIDA, I., SEO, J.W., WOHLMUTH, W., CANEAU, C., and BHAT, R.: 'Long wavelength metal-semiconductor-metal photodiodes with Ti/ Au and indium-tin-oxide electrodes'. Proc. 6th Int. Conf. InP and Related Materials, Santa Barbara, CA, USA, 1994, pp. 284-287
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6. KORDOS, P., MARSO, M., FOX, A., HOLLFELDER, M., and LÜTH, H.: 'n-InGaAs Schottky-diode with current transport along 2-DEG channel', Electron. Lett., 1992, 28, (18), pp. 1689-1690
7. SOOLE, J.B.D., SCHUHMACHER, H., LEBLANC, H.P., BHAT, R., and KOZA, M.A.: 'High-frequency performance of InGaAs metal-semiconductor-metal photodetectors at 1.55μm and 1.3μm wavelengths', Appl. Phys. Lett., 1989, 55, (8), pp. 729-731