Comparison of BCl3/Ar and BCl3/N2 plasma chemistries for dry etching of InGaAlP alloys

Semiconductor Science and Technology

Volumn 11, Issue 8, 1996, Pages 1218-1224

  Hong, J ^a   Lee, J W ^a   Santana, C J ^a   Abernathy, C R ^a   Pearton, S J ^a   Hobson, W S ^b   Ren, F ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; MORPHOLOGY; PLASMA ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS;

ETCH RATES; SELVEDGE LAYERS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030205434     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/8/018     Document Type: Review

References (23)

1. Shul R J, Schneider R P and Constantine C 1994 Electron. Lett. 30 817
2. Ren F, Lothian J R, Hobson W S, Lopata J, Caballero J and Pearton S J 1995 Appl. Phys. Lett. 67 2497
3. Hayes TR 1991 InP and Related Materials ed A Katz (Dedham, MA: Artech House) pp 191-226
4. Maslar J E, Dorsten J F, Bohn P W, Agarawala S, Adesida I, Caneau C and Bhat R 1995 J. Vac. Sci. Technol. B 13 988
5. Murad S K, Beaumont S P, Holland M and Wilkinson C D W 1995 J. Vac. Sci. Technol. B 13 2344
6. Niggebrugge U, Klug M and Garus G 1986 Gallium Arsenide and Related Compounds 1985 (Inst. Phys. Conf. Ser. 79) ed M Fujimoto (Bristol: Institute of Physics) p 367
7. Vadjani N and Parrens P 1987 J. Vac. Sci. Technol. B 5 1391
8. Matsui T, Sugimoto H, Ohnishi T and Ogata H 1988 Electron. Lett. 24 198
9. Pearton S J 1994 Int. J. Mod. Phys. B 8 7781
10. Pearton S J, Abernathy C R, Wisk P and Ren F 1993 J. Appl. Phys. 74 1610
11. Ren F et al 1994 J. Vac. Sci. Technol. B 12 2916
12. Ren F, Cho A Y, Kuo J M, Pearton S J, Lothian J R, Sivco D L, Wilson R G and Chen Y K 1995 Electron. Lett. 31 406
13. van Hassel J G, van Es C M and Nouwens PAM 1995 Electron. Lett. 31 834
14. Pereira R G, Van Hove M and Van Rossum M 1996 J. Vac. Sci. Technol. B 14 106
15. van Gurp G J, Jacobs P, Binsma J and Tiemeijer L 1989 Japan. J. Appl. Phys. 28 L1236
16. Constantine C, Barratt C, Pearton S J, Ren F and Lothian J R 1992 Appl. Phys. Lett. 61 2899
17. Lee J W, Hong J and Pearton S J 1996 Appl. Phys. Lett. 68 847
18. Thomas S III, Ko K K and Pang S W 1995 J. Vac. Sci. Technol. A 13 894
19. Ko K K and Pang S W 1995 J. Electrochem. Soc. 11 3945
20. Sendra J R and Anguita J 1994 Japan. J. Appl. Phys. 33 L390
21. Hobson W S 1993 Proc. Mater. Res. Soc. Symp. 300 75
22. Abernathy C R 1993 J. Vac. Sci. Technol. A 11 889
23. 1990 CRC Handbook of Chemstry and Physics (Boca Raton, FL: CRC)