Control of emission characteristics of silicon field emitter arrays by ion implantation technique

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

Volumn , Issue , 1995, Pages 56-59

  Kanemaru, Seigo ^a   Hirano, Takayuki ^a   Tanoue, Hisao ^a   Itoh, Junji ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; BORON; ELECTRIC CONDUCTIVITY; ELECTRON DEVICES; ION IMPLANTATION; METALLIZING; MICROELECTRONICS; REACTIVE ION ETCHING; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THERMOOXIDATION;

FOWLER-NORDHEIM PLOTS; METALLIZATION; SILICON FIELD EMITTER ARRAYS; SPINDT CATHODES; THERMAL OXIDATION SHARPENING;

ELECTRON EMISSION;

EID: 0029492943     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)