Growth and mechanistic studies of diamond formation by chemical beam epitaxy using methyl and acetylene precursors

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 208-213

  Foord, J S ^a   Loh, K P ^a   Singh, N K ^b   Jackman, R B ^c   Davies, G J ^d  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

^d MARTLESHAM HEATH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; FILM GROWTH; MOLECULAR BEAMS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SURFACES; THIN FILMS;

FLUX RATIOS; GROWTH RATES;

SEMICONDUCTING DIAMONDS;

EID: 0030193855     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01032-7     Document Type: Article

References (13)

1. F.G. Celli and J.E. Butler, Annu. Rev. Phys. Chem. 42 (1991) 643.
2. D.S. Olson, M.A. Kelly, S. Kapoor and S.B. Hagstrum, Mater. Res. Soc. Symp. Proc. Vol. 270 (1993) 335.
3. W.T. Tsang, J. Crystal Growth 120 (1992) 1.
4. D.G. Goodwin, J. Appl. Phys. 74 (1993) 6888.
5. S. Skokov, B. Weiner and M Frenklach, J. Phys. Chem. 98 (1994) 7073.
6. S.J. Harris, Appl. Phys. Lett. 56 (1990) 2298.
7. S. Skokov, B. Weiner and M. Frenklach, J. Phys. Chem. 98 (1994) 8.
8. X.D. Peng, R. Viswathan, G.H. Smudde and P.C. Stair, Rev. Sci. Instrum. 63 (1992) 3930.
9. P.A. Taylor, M. Bozack, W.J. Choyke and J.T. Yates, J. Appl. Phys. 65 (1989) 1099.
10. B.R. Stoner, G.-H.M. Ma, S.D. Woelter and J.T. Glass, Phys. Rev. B 45 (1992) 11067.
11. A. Joshi, R. Nimmaganda and J. Herrington, J. Vac. Sci. Technol. A 8 (1990) 2137.
12. P.K. Bachmann, H.D. Bausen, H. Lade, D. Leers, D.U. Wiechert, N. Herres, R. Kohl and P. Koidl, Diamond Related Mater. 3 (1994) 1308.
13. K.P. Loh, R.B. Jackman and J.S. Foord, Surf. Sci. 341 (1996) 92.