Oxide-charge generation during hot-carrier degradation of PMOSTs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 713-716

  Woltjer, R ^a   Paulzen, G M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; GATES (TRANSISTOR); HOT CARRIERS; MATHEMATICAL MODELS;

CHARGE GENERATION; COULOMB REPULSIONS; DEGRADATION MECHANISM; GATE CURRENT; HOT CARRIER DEGRADATION; OXIDE CHARGE; TIME DEPENDENCY;

THRESHOLD VOLTAGE; MOSFET DEVICES;

COULOMB REPULSION; OXIDE CHARGE GENERATION; SPATIAL DISTRIBUTION;

EID: 0027814765     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. R. Woltjer and G.M. Paulzen,”A new monitor to predict hot-carrier damage of PMOS transistors”, Proc. IEDM, 561-565, 1990.
2. R. Woltjer, A. Hamada and E. Takeda,”Time dependence of p-MOSFET hot-carrier degradation measured and interpreted consistently over ten orders of magnitude”, IEEE Trans. El. Dev. 40, 392-401, 1993.
3. M. Brox et al.,”A physical lifetime prediction method for hot-carrier-stressed P-MOS transistors”, Proc. IEDM, 525-529, 1991.
4. M.Tsuchiaki, H.S. Momose, T. Morimoto and H. Iwai,”New charge pumping method for direct measurement of spatial distribution of fixed charge”, Proc. VLSI Symp, Oiso, 19-20, 1991.
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8. F.C. Hsu and S. Tam,”Relationship between MOSFET degradation and hot-electron-induced interface-state generation”, IEEE El. Dev. Lett. 8, 50-52, 1984.