Laser-induced damage in InSb at 1.06 μm wavelength - A comparative study with Ge, Si and GaAs

Optics and Laser Technology

Volumn 28, Issue 5, 1996, Pages 345-353

  Kuanr, A V ^a,c   Bansal, S K ^b   Srivastava, G P ^c  

^a UNIVERSITY OF COLOGNE   (Germany)

^b UNIVERSITY OF DELHI   (India)

^c UNIVERSITY OF DELHI   (India)

Author keywords

Damage morphology; Indium antimonide (InSb); Laser damage threshold (LDT); Lasers (Nd : glass)

Indexed keywords

CALCULATIONS; FINITE DIFFERENCE METHOD; IRRADIATION; LAPPING; MATHEMATICAL MODELS; POLISHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; THERMAL EFFECTS;

DAMAGE MORPHOLOGY; INDIUM ANTIMONIDE; LASER DAMAGE THRESHOLD; POWER DENSITY; SURFACE QUALITY; TEMPERATURE DEPENDENCE; THERMAL MODEL;

LASER BEAM EFFECTS;

EID: 0030190829     PISSN: 00303992     EISSN: None     Source Type: Journal    
DOI: 10.1016/0030-3992(95)00115-8     Document Type: Article

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