1/f noise as an electromigration characterization tool for W-plug vias between TiN/Al-Cu/TiN metallizations

Solid-State Electronics

Volumn 39, Issue 7, 1996, Pages 999-1003

  Celik Butler Z ^a  

^a Southern Methodist University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; COPPER; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC FREQUENCY MEASUREMENT; ELECTROMIGRATION; GEOMETRY; MICROSTRUCTURE; SIGNAL NOISE MEASUREMENT; TITANIUM NITRIDE; TUNGSTEN;

BLACK EQUATION; BOLTZMANN CONSTANT; CURRENT EXPONENT; ELECTROMIGRATION ACTIVATION ENERGY; MEDIAN TIME TO FAILURE; VOLTAGE NOISE POWER SPECTRAL DENSITY;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030190069     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00411-4     Document Type: Review

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