1/f noise and electromigration in multilayered via structures

Solid-State Electronics

Volumn 39, Issue 2, 1996, Pages 281-286

  Celik Butler Z ^a   Zhang, R ^a   Patel, N ^a  

^a Southern Methodist University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL MICROSTRUCTURE; CURRENT DENSITY; ELECTRIC CURRENT MEASUREMENT; ELECTROMIGRATION; NUMERICAL METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SIGNAL TO NOISE RATIO; THIN FILMS; TITANIUM COMPOUNDS;

ELECTRON FLOW DIRECTION; ELECTRON MOBILITY FLUCTUATIONS; LOW FREQUENCY NOISE METHOD; NOISE SPECTRAL DENSITY;

MULTILAYERS;

EID: 0030083539     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00127-1     Document Type: Review

References (24)

1. J. R. Black, Sixth Annual Reliability Phys. Symp. Proc. 148 (1967).
2. H. U. Schreiber, Solid-St. Electron. 24, 583 (1981).
3. Z. Çelik-Butler, W. Yang, H. H. Hoang and W. R. Hunter, Solid-St. Electron. 34, 185 (1991).
4. B. Neri, A. Diligenti and P. E. Bagnoli, IEEE Trans. Electron Devices 34, 2317 (1987).
5. W. Yang and Z. Çelik-Butler, Solid-St. Electron. 34, 911 (1991).
6. A. Diligenti, B. Neri, P. E. Bagnoli, A. Barsanti and M. Rizzo, IEEE Electron Device Lett. 6, 606 (1985).
7. J. G. Cottle and T. M. Chen, Fourth Int. VLSI Multilevel Interconnection Conf. Santa Clara, CA (1987).
8. J. G. Cottle and T. M. Chen, Proc. IEEE Southeastcon 1, 166 (1987).
9. R. H. Koch, J. R. Lloyd and J. Cronin, Phys. Rev. Lett. 55, 2487 (1985).
10. Z. Çelik-Butler and M. Ye, Solid-St. Electron. 35, 1209 (1992).
11. T. M. Chen and A. M. Yassine, IEEE Trans. Electron Devices 41, 2165 (1994).
12. J. G. Cottle, N. S. Klonaris and M. Bordelon, IEEE Electron Device Lett. 11, 523 (1990).
13. D. Pramanik and V. Jain, Solid-St. Tech. 34, 97 (1991).
14. J. S. May, IEEE Int. Reliability Phys. Symp. 91 (1991).
15. J. C. Ondrusek, A. Nishimura, H. H. Hoang, T. Sugiura, R. Blumenthal, H. Kitagawa and J. W. McPherson, IEEE Int. Reliability Phys. Symp. 179 (1988).
16. J. M. Towner, IEEE Int. Reliability Phys. Symp. 81 (1985).
17. J. Rioult, J. Venambre, R. Bosmans and O. Lesaint, Philips Internal Report RTC/TI, 121 (1982).
18. A. S. Oates, F. Nkansah and S. Chittipeddi, J. appl. Phys. 72, 2227 (1992).
19. W. Yang, Z. Çelik-Butler, H. H. Hoang and W. R. Hunter, IEEE IEDM Tech. Dig. 681 (1989).
20. L. M. Ting, J. S. May, W. R. Hunter and J. W. McPherson, IEEE Int. Reliability Phys. Symp. 311 (1993).
21. J. R. Lloyd, J. appl. Phys. 69, 7601 (1991).
22. J. A. Schwarz, A. J. Patrinos, I. S. Bakshee, E. A. Salkov and B. I. Khizhnyak, J. appl. Phys. 70, 1561 (1991).
23. P. H. Chang, H. Y. Liu, J. A. Keenan and J. M. Anthony, J. appl. Phys. 62, 2485 (1987).
24. A. G. Milnes and C. L. Bauer, Solid-St. Electron. 34, 741 (1991).