Kinetics of GaAs growth by low pressure MO-CVD

Journal of Electronic Materials

Volumn 13, Issue 5, 1984, Pages 815-830

  Heinecke, H ^a   Veuhoff, E ^a   Putz N ^a   Heyen, M ^a   Balk, P ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

chemical vapor deposition; GaAs; growth kinetics; low pressure deposition; metalorganics

Indexed keywords

CHEMICAL REACTIONS - REACTION KINETICS;

CHEMICAL VAPOR DEPOSITION; GROWTH KINETICS; LOW PRESSURE DEPOSITION; METALORGANICS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0021500901     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02657928     Document Type: Article

References (18)

1. Investigations on low temperature mo-cvd growth of GaAs
2. On the Reaction Mechanism of GaAs MOCVD