Modulation bandwidth and noise limit of photoconductive gates

Optical and Quantum Electronics

Volumn 28, Issue 7, 1996, Pages 961-973

  Hwang, J R ^a   Cheng, H J ^a,b   Whitaker, J F ^a   Rudd, J V ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b Picometrix Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITANCE; EFFICIENCY; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); LASERS; LEAKAGE CURRENTS; OPTIMIZATION; PERFORMANCE; SIGNAL NOISE MEASUREMENT; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE;

GATING EFFICIENCY; GATING LASER POWER; INTEGRATED JUNCTION FIELD EFFECT TRANSISTORS; LASER AMPLITUDE FLUCTUATION; MODULATION BANDWIDTH; NOISE LIMIT; PARASITIC CAPACITANCE; PHOTOCONDUCTIVE GATES; PHOTOVOLTAIC CURRENT; PICOSECOND TEMPORAL RESOLUTION;

OPTOELECTRONIC DEVICES;

EID: 0030189217     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00820161     Document Type: Article

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