Scanning probe microscopy for testing ultrafast electronic devices

Optical and Quantum Electronics

Volumn 28, Issue 7, 1996, Pages 819-841

  Hou, A S ^a,b   Nechay, B A ^a   Ho, F ^a   Bloom, D M ^a  

^a STANFORD UNIVERSITY   (United States)

^b Park Scientific Instruments   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC VARIABLES MEASUREMENT; ELECTRIC WAVEFORMS; FREQUENCY DOMAIN ANALYSIS; INTEGRATED CIRCUITS; MICROSCOPIC EXAMINATION; PERFORMANCE; SENSITIVITY ANALYSIS; TIME DOMAIN ANALYSIS;

DYNAMIC VOLTAGE CONTRAST; GALLIUM ARSENIDE CIRCUITS; NONCONTACT PROBING TECHNIQUE; SCANNING PROBE MICROSCOPY; SILICON CIRCUITS; SPATIAL RESOLUTION; ULTRAFAST ELECTRONIC DEVICES; VOLTAGE SENSITIVITY; VOLTAGE WAVEFORMS;

ELECTRONIC EQUIPMENT TESTING;

EID: 0030188632     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00820151     Document Type: Article

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