InP-based devices and their applications for merged FET-HBT technologies

Microwave and Optical Technology Letters

Volumn 11, Issue 3, 1996, Pages 121-125

  Parikh, P ^a   Kiziloglu, K ^a   Mondry, M ^a   Chavarkar, P ^a   Keller, B ^a   Denbaars, S ^a   Mishra, U ^a  

^a University of California   (United States)

Author keywords

Merged technology; n HJFET; Pnp HBT

Indexed keywords

FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

HIGH SPEED CIRCUITS; JUNCTION GATE DEVICES; LEVEL SHIFTER; MERGED TECHNOLOGY;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030081542     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1098-2760(19960220)11:3<121::AID-MOP3>3.0.CO;2-N     Document Type: Article

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