Factors affecting the quantification of boron in SiO2 and Si by sputtered neutral mass spectrometry

Surface and Interface Analysis

Volumn 24, Issue 6, 1996, Pages 371-374

  Wise, Michael L ^a   Moriya, Netzer ^a   Downey, Stephen W ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHARACTERIZATION; ION IMPLANTATION; IONIZATION; MASS SPECTROMETRY; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON; SPUTTERING;

NEUTRAL ATOM; SPUTTERED NEUTRAL MASS SPECTROMETRY; TOTAL BORON DETECTION; ULTRAHIGH INTENSITY POSTIONIZATION MASS SPECTROMETRY;

BORON;

EID: 0030172395     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199606)24:6<371::AID-SIA123>3.0.CO;2-G     Document Type: Article

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