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Volumn 279, Issue 1-2, 1996, Pages 248-252
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Precisions on reaction monitoring from in-situ resistance measurements: Relations between such measurements and actual reaction kinetics
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Author keywords
Growth mechanism; Reaction kinetics; Resistivity; Silicides
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Indexed keywords
CALCULATIONS;
ELECTRIC CONDUCTIVITY;
ELECTRIC RESISTANCE;
ELECTRIC RESISTANCE MEASUREMENT;
HEAT TRANSFER;
MORPHOLOGY;
PHASE TRANSITIONS;
SILICON COMPOUNDS;
TEMPERATURE;
THIN FILMS;
HEAT GENERATION;
IN SITU RESISTANCE MEASUREMENTS;
KISSINGER METHOD;
REACTION MONITORING;
TEMPERATURE CURVES;
REACTION KINETICS;
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EID: 0030168809
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/0040-6090(95)08192-5 Document Type: Article |
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Times cited : (11)
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References (7)
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