High-quality InGaAs/lnP multiquantum-well structures on Si fabricated by direct bonding

Electronics Letters

Volumn 30, Issue 12, 1994, Pages 1008-1009

  Mori, K ^a   Tokutome, K ^a   Nishi, K ^a   Sugou, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Gallium indium arsenide; Indium phosphide; Semiconductor quantum wells; Wafter bonding

Indexed keywords

INTEGRATED OPTOELECTRONICS; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; RELIABILITY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; STRESS RELAXATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ETCHPIT DENSITY; OPTICAL QUALITY; WAFTER BONDING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0028769449     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940657     Document Type: Article

References (5)

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4. Wada, H., Ogawa, Y., and Kamijoh, T.: ‘Electrical characteristics of directly-bonded GaAs and InP’, Appl. Phys. Lett., 1993, 62, pp. 738-740
5. Lo, H. Y., Bhat, R., Hwang, M. D., Chua, C., and Lin, H. C.: ‘Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement’, Appl. Phys. Lett., 1993, 62, pp. 1038-1040