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Volumn 10, Issue 8, 1995, Pages 1953-1957

Activation energy for Pt2Si and PtSi formation measured over a wide range of ramp rates

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ELECTRIC RESISTANCE MEASUREMENT; EVAPORATION; FURNACES; HEATING; PHASE TRANSITIONS; PLATINUM COMPOUNDS; POLYCRYSTALLINE MATERIALS; SAPPHIRE; SEMICONDUCTING SILICON; SINGLE CRYSTALS;

EID: 0029358227     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/JMR.1995.1953     Document Type: Article
Times cited : (15)

References (18)
  • 1
  • 13
    • 0003921499 scopus 로고
    • N. G. Einspruch and G.B. Larrabee Academic Press, New York Chap. 6
    • M-A. Nicolet and S.S. Lau, in VLSI Electronics: Microstructure Science, edited by N. G. Einspruch and G.B. Larrabee (Academic Press, New York, 1983), Vol. 6, Chap. 6.
    • (1983) VLSI Electronics: Microstructure Science , vol.6
    • Nicolet, M.-A.1    Lau, S.S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.