Design and fabrication of 1.31-1.55-μm phased-array duplexer on InP

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 2, Issue 2, 1996, Pages 251-256

  Mestric, Roland ^a,b,c   Renaud, Monique ^a,d,e,f,g   Bachmann, Maurus ^a,h,i   Martin, B ^a   Gaborit, Fabienne ^a,f,j,k  

^a NOKIA RESEARCH CENTER   (United States)

^b Ecl Sup d' Electricité   (France)

^c UNIVERSITÉ DE LORRAINE   (France)

^d UNIVERSITÉ DE LYON   (France)

^e PHILIPS RESEARCH LABORATORIES   (Netherlands)

^f Alcatel Alsthom Recherche

^g Photonic Component Unit

^h ETH ZURICH   (Switzerland)

ⁱ Alcatel Alsthom Recherche   (France)

^j University of Créteil   (France)

^k Bioinformatique et Chimie Moléculaire   (France)

more..

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BIREFRINGENCE; COMPUTER SIMULATION; CROSSTALK; DIFFRACTION GRATINGS; ELECTRONIC EQUIPMENT MANUFACTURE; FINITE ELEMENT METHOD; FREQUENCY RESPONSE; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM PHOSPHIDE; WAVEGUIDES;

LATERAL OFFSETS; OPTICAL BANDWIDTH; PHASED ARRAY DUPLEXER; POLARIZATION INSENSITIVE DEVICES; WAVEGUIDE ARRAYS;

MULTIPLEXING EQUIPMENT;

EID: 0030156472     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.577372     Document Type: Article

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