Full-duplex operation of an in-line transceiver emitting at 1.3μm and receiving at 1.55μm

Electronics Letters

Volumn 32, Issue 5, 1996, Pages 473-474

  Nakajima, H ^a   Charil, J ^a   Robein, D ^a   Gloukhian, A ^a   Pierre, B ^a   Landreau, J ^a   Grosmaire, S ^a   Leroy, A ^a  

^a ORANGE LABS   (France)

Author keywords

Optical communication; Transceivers

Indexed keywords

BANDWIDTH; DIFFRACTION GRATINGS; DISTRIBUTED FEEDBACK LASERS; ELECTRIC CURRENTS; LIGHT EMISSION; LIGHT MODULATION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL COMMUNICATION; REACTIVE ION ETCHING; RECEPTION QUALITY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

CHEMICAL ETCHING; FABRY-PEROT LASERS; OPTICAL CROSSTALK; PHOTONIC INTEGRATED CIRCUITS; PLANAR LIGHTWAVE CIRCUITS; PROTON IMPLANTATION; PSEUDORANDOM BINARY SEQUENCES; REACTIVE ION BEAM ETCHING; RECEIVER SENSITIVITY; THRESHOLD CURRENT;

TRANSCEIVERS;

EID: 0030082235     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960339     Document Type: Article

References (6)

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