The metal organic vapour phase epitaxy of ZnTe: I. Properties and decomposition kinetics of organometallics

Progress in Crystal Growth and Characterization of Materials

Volumn 31, Issue 1-2, 1995, Pages 1-44

  Kuhn, W S ^a   Qu'Hen, B ^a   Gorochov, O ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CATALYSIS; CONDENSATION; DECOMPOSITION; MASS SPECTROMETRY; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; PYROLYSIS; REACTION KINETICS; SEMICONDUCTOR GROWTH; STABILITY;

AUTOCATALYSIS; BOND DISRUPTION ENERGY; HOMOLYSIS; ISOTHERMAL ERSATZ REACTOR; REACTION MECHANISMS; SEMICONDUCTING ZINC TELLURIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0029504677     PISSN: 09608974     EISSN: None     Source Type: Journal    
DOI: 10.1016/0960-8974(95)00016-X     Document Type: Article

References (83)

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2. Carbon doping exceeding 1020 cm-3 in GaAs grown by AP-MOVPE
3. Decomposition and Impurity Analysis of Organotellurium Precursors for MOVPE
4. Organometallic Molecules for Semiconductor Fabrication [and Discussion]
5. Metalorganic growth of CdTe and HgCdTe epitaxial films at a reduced substrate temperature using diisopropyltelluride
6. Temperature-independent unassisted pyrolytic MOCVD growth of cadmium telluride at 290°C and mercury telluride at 325°C using dimethylcadmium methylallyltelluride and dimethylmercury
7. Pyrolysis of dimethylzinc and dimethylzinc-d6by the toluene carrier method
8. In-situ monitoring of chemical reactions in MOCVD growth of ZnSe
9. Studies of the pyrolysis of diethylzinc by the toluene carrier method and of the reaction of ethyl radicals with toluene
10. An examination of organometallic thermal stability and its relevance to low-temperature MOCVD growth of HgCdTe
11. The Use of Metal-Organics in the Preparation of Semiconductor Materials
12. OMVPE growth of CdTe-ZnTe superlattices
13. ZnTe layers grown on GaAs substrates by low pressure MOCVD
14. Photoluminescence of MBE and MOCVD ZnTe Films on GaAs
15. Metalorganic chemical vapor deposition growth of Cd1−yZnyTe epitaxial layers on GaAs and GaAs/Si substrates