Device performance of submicrometre MESFETs with LTG passivation

Electronics Letters

Volumn 29, Issue 17, 1993, Pages 1550-1551

  Yin, L W ^a   Nguyen, N X ^a   Kiziloglu, K ^a   Ibbetson, J P ^a   Gossard, A C ^a   Mishra, U K ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

MESFETs; Passivation

Indexed keywords

ELECTRIC CONTACTS; ELECTRIC FREQUENCY MEASUREMENT; ELECTRIC NETWORK ANALYZERS; LOW TEMPERATURE OPERATIONS; MICROWAVE DEVICES; MICROWAVE MEASUREMENT; OSCILLATIONS; PASSIVATION; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

DEVICE PERFORMANCE; GATE DRAIN BREAKDOWN VOLTAGE; LOW TEMPERATURE GROWTH; SUBMICROMETER MESFET; TRANSCONDUCTANCE; WET CHEMICAL ETCHING;

MESFET DEVICES;

EID: 0027649594     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19931033     Document Type: Article

References (4)

1. CHEN, C.-L., SMITH, F. W., CLIFTON, B. J., MAHONEY, L. J., MANFRA, M. J., and CALAWA, A. R.: ‘High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator’, IEEE Electron Device Lett., 1991,12, (6), pp. 306-308
2. YIN, L.-W., NGUYEN, N. X., HWANG, Y., IBBETSON, J. P., KOLBAS, R. M., GOSSARD, A. C., and MISHRA, U. K.: ‘Investigation of gate-drain characteristics of power GaAs MESFET with LTG passivation as a function of temperature’. 1993 Spring MRS Meeting, San Francisco, California, 12th-16th April 1993
3. YIN, L.-W., HWANG, Y., LEE, J. H., KOLBAS, R. M., TREW, R. J., and MISHRA, U. K.: ‘Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE’, IEEE Electron Device Lett., 1990, 11, (12), pp. 561-563
4. NGUYEN, L. D.: Ph.D. Dissertation, Cornell University, 1989