Hydrogen-radical-balanced steam oxidation for growing ultra-thin high-reliability gate oxide films

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1994, Pages 109-110

  Ohmi, K ^a   Nakamura, K ^a   Futatsuki, T ^a   Ohmi, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; ELECTRON TUNNELING; FILM GROWTH; FREE RADICALS; HYDROGEN; LEAKAGE CURRENTS; MOS DEVICES; PASSIVATION; THIN FILMS; WATER;

DIELECTRIC BREAKDOWN; ELECTRON HOLETRAPS; TUNNELING INJECTION TECHNIQUE;

THERMOOXIDATION;

EID: 0028570710     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)