Density anomaly effect upon silicon melt flow during Czochralski crystal growth II. Time-topical flow structure under the growth interface

Journal of Crystal Growth

Volumn 160, Issue 1-2, 1996, Pages 49-54

  Togawa, Shinji ^b   Chung, Sang Ik ^b   Kawanishi, Soroku ^b   Izunome, Koji ^b   Terashima, Kazutaka ^a,b   Kimura, Shigeyuki ^b  

^a Komatsu Electronic Metals Co Ltd   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY LAYERS; DENSITY (SPECIFIC GRAVITY); EFFECTS; FLOW OF FLUIDS; GALLIUM; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; STATISTICAL METHODS; WAVELET TRANSFORMS;

DENSITY ANOMALY EFFECT; GROWTH INTERFACE; SILICON MELT FLOW; TEMPERATURE FLUCTUATION; TIME TOPICAL FLOW STRUCTURE;

CRYSTAL GROWTH FROM MELT;

EID: 0030105431     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00553-6     Document Type: Article

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