Electrical, optical and materials properties of ion beam synthesised (IBS) FeSi2

Nuclear Inst. and Methods in Physics Research, B

Volumn 106, Issue 1-4, 1995, Pages 364-371

  Reeson, K J ^a   Finney, M S ^a   Harry, M A ^a   Hutchinson, S V ^a   Tan, Y S ^a   Leong, D ^a   Bearda, T R ^a   Yang, Z ^a   Curello, G ^a   Homewood, K P ^a   Gwilliam, R M ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001365153     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(96)80031-0     Document Type: Article

References (47)

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2. High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation
3. High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation
4. Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesis
5. Buried layers of silicon oxy-nitride fabricated using ion beam synthesis
6. IIT-90
7. Hot Electron Transistors Using Si/CoSi2
8. Nisi2-Formation By 6 Mev High Dose Nickel Implantation Into Silicon
9. Ion-Beam Synthesis of Buried Yttrium Silicide
10. Effects of annealing and cobalt implantation on the optical properties of βFeSi2.
11. Determination of the Optical & Materials Properties of βFeSi2 Layers Fabricated Using Ion Beam Synthesis
12. Ion-beam-induced simultaneous epitaxial growth of α- and cubic FeSi2 in Si (100) at 320°C
13. Electronic and vibrational properties of semiconducting crystalline FeSi2 layers grown on Si(111)
14. H. Powalla and K. Hertz, Appl. Surf. Sci. (in press).