Epitaxial diamond Schottky barrier diode with on/off current ratios in excess of 107 at high temperatures

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 419-422

  Ebert, W ^a   Vescan, A ^a   Borst, T H ^a   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DIAMOND FILMS; ELECTRIC CURRENTS; EPITAXIAL GROWTH; FILM GROWTH; GOLD; HIGH TEMPERATURE EFFECTS; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SUBSTRATES;

EPITAXIAL DIAMOND DIODES; ON/OFF CURRENT RATIOS;

SCHOTTKY BARRIER DIODES;

EID: 0028737242     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)