Fine structure in 1.4 eV luminescence band from plasma deposited amorphous silicon layers on silicon substrates

Applied Physics Letters

Volumn 68, Issue 11, 1996, Pages 1458-1460

  Rao, K S R K ^a   Sreedhar, A K ^a   Bhat, H L ^a   Singh, R A ^b   Dubey, G C ^b   Kumar, Vikram ^b  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; EXCITONS; GLASS; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SILICON WAFERS; THERMAL EFFECTS; THIN FILMS;

FOURIER TRANSFORM PHOTOLUMINESCENCE SPECTROMETERS; ILLUMINATION INTENSITY; LUMINESCENCE BAND; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AMORPHOUS SILICON;

EID: 0030103976     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116253     Document Type: Article

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