Surface observation and modification of Si substrate in NH4F and H2SO4 solutions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1064-1068

  Ando, Atsushi ^a   Miki, Kazushi ^a   Matsumoto, Kazuhiko ^a   Shimizu, Tetsuo ^b   Morita, Yukinori ^b   Tokumoto, Hiroshi ^a,b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

Atomic force microscopy; Electrochemical scanning tunneling microscopy; In situ observation; Modification; Silicon; Surface

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; HYDROGEN INORGANIC COMPOUNDS; NITROGEN COMPOUNDS; SCANNING TUNNELING MICROSCOPY; SOLUTIONS; SPECIMEN PREPARATION; SUBSTRATES; SURFACE TREATMENT;

ELECTROCHEMICAL SCANNING TUNNELING MICROSCOPY; IN SITU OBSERVATION; SURFACE ETCHING PROCESS; ULTRAPURE WATER;

SEMICONDUCTING SILICON;

EID: 0030078783     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1064     Document Type: Article

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