Manifestation of effective-mass states of secondary minima in the persistent photoconductivity related to the DX centre in AlxGa1-xAs

Semiconductor Science and Technology

Volumn 11, Issue 1, 1996, Pages 68-73

  Belyaev, A E ^a   Ryabchenko, Yu S ^a   Sheinkman, M K ^a   Von Bardeleben, H J ^b  

^a INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^b UNIVERSITÉ PARIS DESCARTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; FERMI LEVEL; LOW TEMPERATURE PHENOMENA; PARAMAGNETIC RESONANCE; PHOTOCONDUCTIVITY; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR DOPING;

EFFECTIVE MASS STATE; FERMI LEVEL PINNING; FREE ELECTRON MOBILITY; GROUND STATE; PHOTOEXCITATION; PHOTON FLUX; SECONDARY CONDUCTION BAND MINIMA;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0029755848     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/1/016     Document Type: Article

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