Magnetic resonance studies of group IV and VI donors in Ga 1-xAlxAs

Semiconductor Science and Technology

Volumn 6, Issue 10 B, 1991, Pages

  Von Bardeleben, H J ^a  

^a UNIVERSITÉ PARIS DESCARTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC RESONANCE; MAGNETISM--PARAMAGNETISM; SILICON AND ALLOYS; SPECTROSCOPIC ANALYSIS; SULFUR;

DX CENTERS; EFFECTIVE MASS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0026237683     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/6/10B/021     Document Type: Article

References (38)

1. Deep donor levels (DX centers) in III-V semiconductors
2. Low-Temperature Static Magnetic Susceptibility of Al0.3Ga0.7As with DX Centers
3. EPR Studies on Silicon-Doped Alx Ga1−x As Epitaxial Layers