Growth Of Gallium Nitride On Silicon Carbide By Molecular Beam Epitaxy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 877, Issue , 1988, Pages 8-12

  Paisley, M J ^a   Sitar, Z ^a   Carter, C H ^a   Davis, R F ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GALLIUM NITRIDE; GLOW DISCHARGES; III-V SEMICONDUCTORS; MICROWAVE AMPLIFIERS; MOLECULAR BEAM EPITAXY; NITRIDES; NITROGEN; OPTOELECTRONIC DEVICES; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE;

COMPOUND SEMICONDUCTORS; ELECTRON DRIFT VELOCITY; FILM CHARACTERIZATIONS; GALLIUM NITRIDES (GAN); LOW GROWTH TEMPERATURE; MICROWAVE POWER AMPLIFIER; NITROGEN VACANCIES; SHORT WAVELENGTHS;

WIDE BAND GAP SEMICONDUCTORS;

EID: 84951212990     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.943932     Document Type: Conference Paper

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