Low resistance graded contacts to n-type ZnSe

Applied Physics Letters

Volumn 68, Issue 3, 1996, Pages 370-372

  Lazzarino, M ^a   Ozzello, T ^a   Bratina, G ^a   Paggel, J J ^a   Vanzetti, L ^a   Sorba, L ^a   Franciosi, A ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BINDING ENERGY; CHLORINE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; FERMI LEVEL; MATHEMATICAL MODELS; OHMIC CONTACTS; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING;

BAND DISCONTINUITY; SCHOTTKY BARRIER; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY; TRANSMISSION LINE MODEL; ZINC CADMIUM SELENIDE; ZINC SELENIDE;

SEMICONDUCTOR JUNCTIONS;

EID: 0029752506     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116719     Document Type: Article

References (10)

1. See for example, II-VI Blue/Green Laser Diodes, edited by R. L. Gunshor and A. V. Nurmikko, Proc. SPIE 2346 (1994).
2. R. G. Dandrea and B. Duke, Appl. Phys. Lett. 64, 2145 (1994) and references therein.
3. T. Miyajima, H. Okuyama, and K. Akimoto, Jpn. J. Appl. Phys. INS 31, L1743 (1992).
4. More detail will be provided elsewhere: G. Bratina, T. Ozzello, M. Lazzarino, L. Vanzetti, J. J. Paggel, L. Sorba, A. Franciosi, and M. Peressi (unpublished).
5. xSe)=(1-x)2.76+x1.66-0.301x(1-x).
6. pb0∼2.0-2.1 eV. See M. Vos, F. Xu, S. G. Anderson, J. H. Weaver, and H. Cheng, Phys. Rev. B 39, 10744 (1989) and W. Chen, A. Kahn, P. Soukiassian, P. S. Mangat, J. Gaines, C. Ponzoni, and D. Olego, J. Vac. Sci. Technol. B 12, 2639 (1994).
7. The present results were obtained on Se-rich surfaces, as opposed to the Zn-stabilized c(2×2) surfaces used by other authors (see Ref. 6). Variations of ∼0.25 eV in the Schottky barrier have been recently observed in comparing Au/ZnSe(001) junctions fabricated on Zn-rich and Se-rich surfaces. See W. Chen, J. Gaines, C. Ponzoni, D. Olego, P. S. Mangat, P. Soukiassian, and A. Kahn, J. Cryst. Growth 138, 1078 (1994).
8. V. Pellegrini, R. Atanasov, A. Tredicucci, F. Beltram, C. Amzulini, L. Sorba, L. Vanzetti, and A. Franciosi, Phys. Rev. B AIP 51, 5171 (1995).
9. H. H. Berger, Solid State Electron. INS 15, 145 (1972).
10. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).