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Volumn 64, Issue 16, 1994, Pages 2145-2147

Design of ohmic contacts to p-ZnSe

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000610960     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.111683     Document Type: Article
Times cited : (45)

References (18)
  • 9
    • 33645426115 scopus 로고
    • were used for all atoms except Zn. For Zn, an optimized scheme was used to make both a core-3d and valance-3d potential. The valence-3d potential required a large basis set (40-Ry plane wave cutoff) and was used in only a few test calculations. All barrier heights reported here use the less accurate core-3d potential and a 12-15 Ry cutoff
    • (1991) Phys. Rev. B , vol.43 , pp. 1993
    • Trouillier, N.1    Martins, J.L.2
  • 18
    • 84951355473 scopus 로고    scopus 로고
    • This changes by only 0.03 eV (to 0.89 eV) if the more accurate valence-3d potential is used for Zn


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.