Influence of the nature of the mask on polysilicon gate patterning in high density plasmas

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 333-336

  Bell, F H ^a   Joubert, O ^a   Vallier, L ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; MICROELECTRONIC PROCESSING; PHOTORESISTS; PLASMA ETCHING; PLASMA SOURCES; PLASMAS; POLYCRYSTALLINE MATERIALS; SILICON;

HIGH DENSITY PLASMAS; PHOTORESIST MASK; POLYSILICON GATE PATTERNING; POLYSILICON TO OXIDE SELECTIVITY; THIN GATE OXIDE;

MASKS;

EID: 0029775495     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00257-X     Document Type: Article

References (3)

1. F. H. Bell, O. Joubert, L. Vallier, Proceedings of the 10th International Colloquium on Plasma Processes, Antibes, France, 183 (1995)
2. S. VanNguyen, D. Dobuzinsky, S. R. Stiffler, G. Chrisman, J. Vac. Sci. Technol, Vol. 138, 1112, (1991)
3. M. Nakamura, K. Iizuka, and H. Yano, Jpn. J. Appl. Phys. 28 (10), 2142 (1989)