Probing resonant tunneling and charge accumulation via capacitance measurements in [111]-oriented InGaAs/GaAs MQW and superlattices

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 591-595

  Sanchez Rojas J L ^a   Sacedon A ^a   Sanz Hervas A ^a   Calleja, E ^a   Munoz E ^a   Abril, E J ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE MEASUREMENT; CHARGE CARRIERS; ELECTRIC FIELDS; ELECTRON RESONANCE; ELECTRON TRANSITIONS; ELECTRON TUNNELING; LIGHTING; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; SPECTROSCOPY; X RAYS;

CHARGE ACCUMULATION; CONDUCTANCE VOLTAGE CHARACTERISTICS; DARK DEVICE CAPACITANCE; PHOTOCAPACITANCE SPECTROSCOPY; PHOTOGENERATED CARRIERS; POISSON EQUATIONS; RESONANT TUNNELING; SCHRODINGER EQUATIONS; SEQUENTIAL TUNNELING; X RAY MEASUREMENTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029698525     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00338-X     Document Type: Article

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