Single-electron-tunneling spectroscopy of asymmetric laterally confined double-barrier heterostructures

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 15-19

  Schmidt, T ^a   Tewordt, M ^a,c   Haug, R J ^a   Von Klitzing, K ^a   Forster A ^b   Luth H ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c DEUTSCHE BANK AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; ELECTRON ENERGY LEVELS; ELECTRON SPECTROSCOPY; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; MAGNETIC FIELD EFFECTS; MAGNETIC FIELDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS;

CURRENT VOLTAGE STAIRCASE; DOUBLE BARRIER HETEROSTRUCTURES; ELECTRON ACCUMULATION; QUANTUM DOT LEVELS; RESONANT TUNNELING; SINGLE ELECTRON TUNNELING SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 0029711169     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00205-7     Document Type: Article

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