The design of a one megabit non-volatile m-r memory chip using 1.5 × 5 µm cells

IEEE Transactions on Magnetics

Volumn 24, Issue 6, 1988, Pages 3117-3119

  Pohm, A V ^a   Huang, J S T ^a   Daughton, J M ^a   Krahn, D R ^a   Mehra, V ^a  

^a IOWA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LITHOGRAPHY; MAGNETIC MATERIALS;

BIPOLAR CIRCUITRY; DOUBLE-LAYER MEMORY; MAGNETIC MEMORIES; MEMORY CHIP; NONDESTRUCTIVE READOUT CELLS;

DATA STORAGE, MAGNETIC;

EID: 0024112069     PISSN: 00189464     EISSN: 19410069     Source Type: Journal    
DOI: 10.1109/20.92353     Document Type: Article

References (3)

1. A. V. Pohm, J. M. Daughton, C. S. Comstock. H. Y. Yoo, J. Hur. “Threshold Properties of 1. 2, and 4 gm Multi layer M-R Memory Cells.” IEEE Trans. Mag. 23–5, pp. 2575–77. Sept. 1987.
2. C. S. Comstock, H. Y. Yoo. A. V. Pohm. “Perturbations to the Stoner-Wohlfarth Threshold in 2 × 30 it= M-R Memory Elements.” Being published Journal Appl. Phys., April 1988.
3. J.A.C. van Ooyen, W. F. Druyvesteyn. and L. Postma. “Magnetoresistance in Laminated N. Fe Films,” J. Appl. Phys. 53. 2596 (1982).