Analytical Models for n+-p+ Double-Gate SOI MOSFET's

IEEE Transactions on Electron Devices

Volumn 42, Issue 11, 1995, Pages 1940-1948

  Suzuki, Kunihiro ^a   Sugii, Toshihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); MATHEMATICAL MODELS; NUMERICAL ANALYSIS; SEMICONDUCTOR DOPING;

CONDUCTION CHARGE; DRAIN CURRENT; GATE VOLTAGE; SCALING THEORY; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0029403527     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.469401     Document Type: Article

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