A New High-Performance Lateral Insulated Gate Bipolar Transistor Formed On Quasi-SOI

IEEE Electron Device Letters

Volumn 16, Issue 9, 1995, Pages 402-404

  Matsumoto, Satoshi ^a   Kim, I Jung ^a   Yachi, Toshiaki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; OXIDES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THIN FILM DEVICES;

BREAKDOWN VOLTAGE; INSULATED GATE BIPOLAR TRANSISTOR; LATCH-UP CURRENTS;

BIPOLAR TRANSISTORS;

EID: 0029379175     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.406802     Document Type: Article

References (11)

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