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Volumn , Issue , 1993, Pages 254-258
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SOI LIGBT devices with a dual P-well implant for improved latching characteristics
a
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Author keywords
[No Author keywords available]
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Indexed keywords
GATES (TRANSISTOR);
ION IMPLANTATION;
MOS DEVICES;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR JUNCTIONS;
SILICON ON INSULATOR TECHNOLOGY;
VOLTAGE CONTROL;
DUAL P WELL IMPLANT;
LATCHING CHARACTERISTICS;
LATERAL INSULATED GATE BIPOLAR TRANSISTOR;
POWER INTEGRATED CIRCUITS;
THRESHOLD VOLTAGE;
BIPOLAR TRANSISTORS;
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EID: 0027307187
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (22)
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References (10)
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