MBE-Grown Si/SiGe HBT's with High β, fT, and f max

IEEE Electron Device Letters

Volumn 13, Issue 4, 1992, Pages 206-208

  Gruhle, A ^a   Kibbel, H ^a   Konig U ^a   Erben, U ^b   Kasper, E ^a  

^a DAIMLER AG   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY--APPLICATIONS; SEMICONDUCTING GERMANIUM COMPOUNDS--APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS--APPLICATIONS; SEMICONDUCTOR DEVICES--JUNCTIONS;

BASE DOPING; BURIED-LAYER SUBSTATE DEVICES; HETEROJUNCTION BIPOLAR TRANSISTORS; TRANSIT FREQUENCY;

TRANSISTORS, BIPOLAR;

EID: 0026851318     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.145022     Document Type: Article

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