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Volumn 10, Issue 2, 1996, Pages 129-137

Series electrical resistance of proton-implanted vertical-cavity top-surface-emitting lasers

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT DISTRIBUTION; ELECTRIC RESISTANCE; SEMICONDUCTOR DEVICE MODELS;

EID: 0029259495     PISSN: 09525432     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (1)

References (41)
  • 1
    • 36549097193 scopus 로고
    • Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasers
    • TAI, K., YANG, L., WANG, Y. H., WYNN, J. D., and CHO, A. Y., 1990, Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasers. Appl. Phys. Lett., 56 (25), 2496-2498.
    • (1990) Appl. Phys. Lett. , vol.56 , Issue.25 , pp. 2496-2498
    • Tai, K.1    Yang, L.2    Wang, Y.H.3    Wynn, J.D.4    Cho, A.Y.5
  • 3
    • 3743060937 scopus 로고
    • Potential barriers and current-voltage characteristics of p-doped graded AlAs-GaAs heterojunctions
    • ZEEB, E., and EBELING, K. J., 1992, Potential barriers and current-voltage characteristics of p-doped graded AlAs-GaAs heterojunctions. J. Appl. Phys., 72 (3), 993-999.
    • (1992) J. Appl. Phys. , vol.72 , Issue.3 , pp. 993-999
    • Zeeb, E.1    Ebeling, K.J.2
  • 5
    • 0026103767 scopus 로고
    • High temperature performance of three-quantum-well vertical-cavity top-emitting lasers
    • Tu, L.-W., WANG, Y.-H, SCHUBERT, E. F., WEIR, B. E., ZYDZIK, G. J., and CHO, A. Y., 1991, High temperature performance of three-quantum-well vertical-cavity top-emitting lasers. Electron. Lett., 27, 457-458.
    • (1991) Electron. Lett. , vol.27 , pp. 457-458
    • Tu, L.-W.1    Wang, Y.-H.2    Schubert, E.F.3    Weir, B.E.4    Zydzik, G.J.5    Cho, A.Y.6
  • 6
    • 0028400915 scopus 로고
    • Uniform characteristics with low threshold and high efficiency for a single-transverse-mode vertical-cavity surface-emitting laser-type device array
    • KOSAKA, H., KURIHARA, K., UEMURA, A., YOSHIKAWA, T., OGURA, I., NUMAI, T., SUGIMOTO, M., and KASAHARA, K., 1994, Uniform characteristics with low threshold and high efficiency for a single-transverse-mode vertical-cavity surface-emitting laser-type device array. IEEE Photon. Technol. Lett., 6 (3), 323-325.
    • (1994) IEEE Photon. Technol. Lett. , vol.6 , Issue.3 , pp. 323-325
    • Kosaka, H.1    Kurihara, K.2    Uemura, A.3    Yoshikawa, T.4    Ogura, I.5    Numai, T.6    Sugimoto, M.7    Kasahara, K.8
  • 8
    • 36549098686 scopus 로고
    • Precision AlGaAs Bragg reflectors fabricated by phase-locked epitaxy
    • WALKER, J. D., MALLOY, K., WANG, S., and SMITH, J. S., 1990, Precision AlGaAs Bragg reflectors fabricated by phase-locked epitaxy. Appl. Phys. Lett., 56 (25), 2493-2495.
    • (1990) Appl. Phys. Lett. , vol.56 , Issue.25 , pp. 2493-2495
    • Walker, J.D.1    Malloy, K.2    Wang, S.3    Smith, J.S.4
  • 9
    • 0005428861 scopus 로고
    • InGaAs-GaAs quantum well vertical-cavity surface-emitting laser using molecular beam epitaxial regrowth
    • LEI, C., ROGERS, T. J., DEPPE, D. G., and STREETMAN, B. G., 1991, InGaAs-GaAs quantum well vertical-cavity surface-emitting laser using molecular beam epitaxial regrowth. Appl. Phys. Lett., 58, 1122-1124.
    • (1991) Appl. Phys. Lett. , vol.58 , pp. 1122-1124
    • Lei, C.1    Rogers, T.J.2    Deppe, D.G.3    Streetman, B.G.4
  • 10
    • 0013502537 scopus 로고
    • Vertical-cavity surface-emitting laser diodes fabricated by phase-locked epitaxy
    • WALKER, J. D., KUCHTA, D. M., and SMITH, J. S., 1991, Vertical-cavity surface-emitting laser diodes fabricated by phase-locked epitaxy. Appl. Phys. Lett., 59, 2079-2081.
    • (1991) Appl. Phys. Lett. , vol.59 , pp. 2079-2081
    • Walker, J.D.1    Kuchta, D.M.2    Smith, J.S.3
  • 11
    • 0000529380 scopus 로고
    • Band-gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasers
    • PETERS, M. G., THIBEAULT, B. J., YOUNG, D. B., SCOTT, J. W., PETERS, F. H., GOSSARD, A. C., and COLDREN, L. A., 1993, Band-gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasers. Appl. Phys. Lett., 63 (25), 3411-3413.
    • (1993) Appl. Phys. Lett. , vol.63 , Issue.25 , pp. 3411-3413
    • Peters, M.G.1    Thibeault, B.J.2    Young, D.B.3    Scott, J.W.4    Peters, F.H.5    Gossard, A.C.6    Coldren, L.A.7
  • 12
    • 0028427246 scopus 로고
    • Vertical-cavity surface-emitting lasers with periodic gain and aluminium top contacts
    • YOFFE, G. W., VAN DER VLEUTEN, W. C., LEYS, M. R., KAROUTA, F., and WOLTER, J. H., 1994, Vertical-cavity surface-emitting lasers with periodic gain and aluminium top contacts. Electron. Lett., 30, 794-795.
    • (1994) Electron. Lett. , vol.30 , pp. 794-795
    • Yoffe, G.W.1    Van Der Vleuten, W.C.2    Leys, M.R.3    Karouta, F.4    Wolter, J.H.5
  • 14
    • 0026189273 scopus 로고
    • Low series resistance high-efficiency GaAs/AlGaAs vertical-cavity surface-emitting lasers with continuously graded mirrors grown by MOCVD
    • Znou, P., CHENG, J., SCHAUS, C. F., SUN, S. Z., ZHENG, K., ARMOUR, E., HAINS, C., HSIN, W., MYERS, D. R., and VAWTER, G. A., 1991, Low series resistance high-efficiency GaAs/AlGaAs vertical-cavity surface-emitting lasers with continuously graded mirrors grown by MOCVD. IEEE Photon. Technol. Lett., 3, 591-593.
    • (1991) IEEE Photon. Technol. Lett. , vol.3 , pp. 591-593
    • Znou, P.1    Cheng, J.2    Schaus, C.F.3    Sun, S.Z.4    Zheng, K.5    Armour, E.6    Hains, C.7    Hsin, W.8    Myers, D.R.9    Vawter, G.A.10
  • 15
    • 21544471282 scopus 로고
    • Low resistance wavelength-reproducible p-type (AlGa)As distributed Bragg reflectors grown by molecular beam epitaxy
    • CHALMERS, S. A., LEAR, K. L., and KILLEEN, K. P., 1993, Low resistance wavelength-reproducible p-type (AlGa)As distributed Bragg reflectors grown by molecular beam epitaxy. Appl. Phys. Lett., 62 (14), 1585-1587.
    • (1993) Appl. Phys. Lett. , vol.62 , Issue.14 , pp. 1585-1587
    • Chalmers, S.A.1    Lear, K.L.2    Killeen, K.P.3
  • 16
    • 0028708893 scopus 로고
    • High wall-plug efficiency temperature-insensitive vertical-cavity surface-emitting lasers with low-barrier p-type mirrors
    • Vertical-cavity surface-emitting Laser Arrays, edited by J. L. Jewell, SPIE International Symposium on Lasers, Sensors and Applications (OE/LASE'94), Los Angeles, California, U.S.A., 27-28 January 1994
    • PETERS, M. G., YOUNG, D. B., PETERS, F. H., THIBEAULT, B. J., SCOTT, J. W., CORZINE, S. W., HERRICK, R. W., and COLDREN, L. A., 1994, High wall-plug efficiency temperature-insensitive vertical-cavity surface-emitting lasers with low-barrier p-type mirrors (invited paper). Vertical-cavity surface-emitting Laser Arrays, edited by J. L. Jewell, SPIE International Symposium on Lasers, Sensors and Applications (OE/LASE'94), Los Angeles, California, U.S.A., 27-28 January 1994, Proc. SPIE, 2147, pp. 2-11.
    • (1994) Proc. SPIE , vol.2147 , pp. 2-11
    • Peters, M.G.1    Young, D.B.2    Peters, F.H.3    Thibeault, B.J.4    Scott, J.W.5    Corzine, S.W.6    Herrick, R.W.7    Coldren, L.A.8
  • 17
    • 0020764108 scopus 로고
    • GaInAsP/InP surface emitting injection lasers with short cavity length
    • SODA, H., MOTEGI, Y., and IGA, K., 1983, GaInAsP/InP surface emitting injection lasers with short cavity length. IEEE J. Quantum Electron., 19, 1035-1041.
    • (1983) IEEE J. Quantum Electron. , vol.19 , pp. 1035-1041
    • Soda, H.1    Motegi, Y.2    Iga, K.3
  • 19
    • 0024033230 scopus 로고
    • Considerations on geometry design of surface-emitting laser diodes
    • BAETS, R., 1988, Considerations on geometry design of surface-emitting laser diodes. Proc, Instn elect. Engrs, Pt J, Optoelectron. 135, 233-241.
    • (1988) Proc, Instn Elect. Engrs, Pt J, Optoelectron. , vol.135 , pp. 233-241
    • Baets, R.1
  • 20
    • 0018504596 scopus 로고
    • LED pulse response analysis considering the distributed CR constant in the peripheral junction
    • HINO, I., and IWAMOTO, K., 1979, LED pulse response analysis considering the distributed CR constant in the peripheral junction. IEEE Trans. Electron. Devices, 26, 1238-1242.
    • (1979) IEEE Trans. Electron. Devices , vol.26 , pp. 1238-1242
    • Hino, I.1    Iwamoto, K.2
  • 21
    • 0020115088 scopus 로고
    • Light intensity profiles of surface-emitting InGaAsP LEDs: Impact on coupling to optical fibres
    • BORSUK, J. A., 1983, Light intensity profiles of surface-emitting InGaAsP LEDs: impact on coupling to optical fibres. IEEE Trans. Electron. Devices, 30, 296-303.
    • (1983) IEEE Trans. Electron. Devices , vol.30 , pp. 296-303
    • Borsuk, J.A.1
  • 22
    • 2342449926 scopus 로고
    • Steady-state distributions of current and junction potential in high radiance LEDs for optical communication systems
    • BUGAJSKI, M., and KONTKIEWICZ, A. M., 1982, Steady-state distributions of current and junction potential in high radiance LEDs for optical communication systems. Electron Technol., 13 (4), 63-79.
    • (1982) Electron Technol. , vol.13 , Issue.4 , pp. 63-79
    • Bugajski, M.1    Kontkiewicz, A.M.2
  • 23
    • 0026171493 scopus 로고
    • Thermal properties of etched-well surface-emitting semiconductor lasers
    • NAKWASKI, W., and OSIŃSKI, M., 1991, Thermal properties of etched-well surface-emitting semiconductor lasers. IEEE J. Quantum Electron., 27, 1391-1401.
    • (1991) IEEE J. Quantum Electron. , vol.27 , pp. 1391-1401
    • Nakwaski, W.1    Osiński, M.2
  • 24
    • 0027612179 scopus 로고
    • Thermal analysis of GaAs-AlGaAs etched-well surface-emitting double-heterostructure lasers with dielectric mirrors
    • NAKWASKI, W., and OSIŃSKI, M., 1993, Thermal analysis of GaAs-AlGaAs etched-well surface-emitting double-heterostructure lasers with dielectric mirrors. IEEE J. Quantum Electron., 29, 1981-1995.
    • (1993) IEEE J. Quantum Electron. , vol.29 , pp. 1981-1995
    • Nakwaski, W.1    Osiński, M.2
  • 25
    • 0000692944 scopus 로고
    • Analysis of current spreading carrier diffusion and transverse mode guiding in surface emitting lasers
    • DUTTA, N. K., 1990, Analysis of current spreading carrier diffusion and transverse mode guiding in surface emitting lasers. J. Appl. Phys., 68, 1961-1963.
    • (1990) J. Appl. Phys. , vol.68 , pp. 1961-1963
    • Dutta, N.K.1
  • 26
    • 0001008802 scopus 로고
    • Spreading resistance in proton-implanted vertical-cavity surface-emitting diode lasers
    • NAKWASKI, W., OSIŃSKI, M., and CHENG, J., 1992, Spreading resistance in proton-implanted vertical-cavity surface-emitting diode lasers. Appl. Phys. Lett., 61, 3101-3103.
    • (1992) Appl. Phys. Lett. , vol.61 , pp. 3101-3103
    • Nakwaski, W.1    Osiński, M.2    Cheng, J.3
  • 27
    • 0027151533 scopus 로고
    • Effect of top-contact geometry on spreading resistance in proton-implanted vertical-cavity surface-emitting lasers
    • Sources and Detectors for Fiber Communications, edited by S. D. Hersee. SPIE International Symposium (OE/FIBERS'92), Boston, Massachusetts, U.S.A., 8-11 September
    • OSIŃSKI, M., NAKWASKI, W., and CHENG, J., 1992, Effect of top-contact geometry on spreading resistance in proton-implanted vertical-cavity surface-emitting lasers. Sources and Detectors for Fiber Communications, edited by S. D. Hersee. SPIE International Symposium (OE/FIBERS'92), Boston, Massachusetts, U.S.A., 8-11 September, Proc. SPIE 1788, pp. 121-131.
    • (1992) Proc. SPIE , vol.1788 , pp. 121-131
    • Osiński, M.1    Nakwaski, W.2    Cheng, J.3
  • 28
    • 0029259392 scopus 로고    scopus 로고
    • Current spreading in proton-implanted vertical-cavity top-surface emitting lasers
    • NAKWASKI, W., and OSOŃSKI, M., 1996, Current spreading in proton-implanted vertical-cavity top-surface emitting lasers. Int. J. Optoelectron., 10, 119-127.
    • (1996) Int. J. Optoelectron. , vol.10 , pp. 119-127
    • Nakwaski, W.1    Osoński, M.2
  • 29
    • 3743060937 scopus 로고
    • Potential barriers and current-voltage characteristics of p-doped graded AlAs-GaAs heterojunctions
    • ZEEB, E., and EBELING, K. J., 1992, Potential barriers and current-voltage characteristics of p-doped graded AlAs-GaAs heterojunctions. J. Appl. Phys., 72 (3), 993-999.
    • (1992) J. Appl. Phys. , vol.72 , Issue.3 , pp. 993-999
    • Zeeb, E.1    Ebeling, K.J.2
  • 30
    • 0029218430 scopus 로고
    • Effects of carrier diffusion on thermal properties of proton-implanted top-surface-emitting lasers (invited paper), Physics and Simulation of Optoelectronic Devices III
    • edited by M. Osiński and W. W. Chow, SPIE International Symposium on Optoelectronic, Microphotonic and Laser Technology (Photonics West '95), San Jose, California, U.S.A., 6-9 February
    • SARZAŁA, R. P., NAKWASKI, W., and OSIŃSKI, M., 1995, Effects of carrier diffusion on thermal properties of proton-implanted top-surface-emitting lasers (invited paper), Physics and Simulation of Optoelectronic Devices III, edited by M. Osiński and W. W. Chow, SPIE International Symposium on Optoelectronic, Microphotonic and Laser Technology (Photonics West '95), San Jose, California, U.S.A., 6-9 February, Proc. SPIE 2399, pp. 583-604.
    • (1995) Proc. SPIE , vol.2399 , pp. 583-604
    • SarzaŁa, R.P.1    Nakwaski, W.2    Osiński, M.3
  • 39
    • 0027588697 scopus 로고
    • Effective thermal conductivity analysis of 1-55 μm InGaAsP/InP verticalcavity top-surface-emitting microlasers
    • OSIŃSKI, M., and NAKWASKI, W., 1993, Effective thermal conductivity analysis of 1-55 μm InGaAsP/InP verticalcavity top-surface-emitting microlasers. Electron. Lett., 29, 1015-1016.
    • (1993) Electron. Lett. , vol.29 , pp. 1015-1016
    • Osiński, M.1    Nakwaski, W.2
  • 40
    • 0028714303 scopus 로고
    • Effective thermal conductivity analysis of vertical-cavity top-surface-emitting lasers with semiconducting Bragg mirrors
    • Vertical-cavity Surface-emitting Laser Arrays, edited by J. L. Jewell. SPIE International Symposium on Lasers, Sensors and Applications (OE/LASE'94), Los Angeles, California, U.S.A., 27-28 January
    • OSIŃSKI,. W., NAKWASKI, W., and LEAL, A., 1994, Effective thermal conductivity analysis of vertical-cavity top-surface-emitting lasers with semiconducting Bragg mirrors. Vertical-cavity Surface-emitting Laser Arrays, edited by J. L. Jewell. SPIE International Symposium on Lasers, Sensors and Applications (OE/LASE'94), Los Angeles, California, U.S.A., 27-28 January, Proc. SPIE 2147, pp. 85-96.
    • (1994) Proc. SPIE , vol.2147 , pp. 85-96
    • Osiński, W.1    Nakwaski, W.2    Leal, A.3


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