Current spreading in proton-implanted vertical-cavity top-surface-emitting lasers

International Journal of Optoelectronics

Volumn 10, Issue 2, 1996, Pages 119-127

  Nakwaski, WŁodzimierz ^a,b   Osiński, Marek ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC CURRENT DISTRIBUTION; SEMICONDUCTOR DEVICE MODELS;

CURRENT SPREADING PHENOMENON; PROTON IMPLANTED VERTICAL CAVITY TOP SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0029259392     PISSN: 09525432     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (50)

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