High Performance Poly-Si TFTs Fabricated Using Pulsed Laser Annealing and Remote Plasma CVD with Low Temperature Processing

IEEE Transactions on Electron Devices

Volumn 42, Issue 2, 1995, Pages 251-256

  Kohno, Atsushi ^a   Sameshima, Toshiyuki ^b   Sana, Naoki ^b   Sekiya, Mitsunobu ^b   Hara, Masaki ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; EXCIMER LASERS; HYDROGENATION; IRRADIATION; LASER APPLICATIONS; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

HYDROGENATED AMORPHOUS SILICON FILMS; INTERFACE TRAP DENSITY; LASER CRYSTALLIZATION; MESH ELECTRODES; OFFSET GATE ELECTRODES; PLASMA HYDROGENATION; REMOTE PLASMA CHEMICAL VAPOR DEPOSITION;

THIN FILM TRANSISTORS;

EID: 0029246215     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.370072     Document Type: Article

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