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Journal of Applied Physics

Volumn 74, Issue 11, 1993, Pages 6592-6598

Pulsed laser-induced melting followed by quenching of silicon films

(2) Sameshima, T a Usui, S a

a SONY CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CRYSTALLIZATION; EXCIMER LASERS; GRAIN GROWTH; INTERFACES (MATERIALS); MELTING; QUENCHING; RAMAN SCATTERING; RAPID SOLIDIFICATION; SEMICONDUCTING FILMS; THIN FILMS;

FILM THICKNESS; LATENT HEAT; NUCLEATION DENSITY; PULSED LASER INDUCED MELTING; RECALESCENCE; TEMPERATURE GRADIENT;

SEMICONDUCTING SILICON;

EID: 0027904249 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.355097 Document Type: Article

Times cited : (72)

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