High temperature operation of n-type 6H-SiC and p-type diamond MESFETs

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 1993, Pages 421-430

  Shin, M W ^a   Bilbro, G L ^a   Trew, R J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EFFICIENCY; HARMONIC ANALYSIS; HIGH TEMPERATURE OPERATIONS; SEMICONDUCTING DIAMONDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMAL EFFECTS;

DIAMOND MESFETS; DOPANT IONIZATION ENERGIES;

MESFET DEVICES;

EID: 0027839855     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)