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Volumn 41, Issue 4, 1994, Pages 811-816
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Capacitance Modelling for double sided Si detectors with Double-Metal Readout
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Author keywords
[No Author keywords available]
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Indexed keywords
DOUBLE METAL READOUT;
DOUBLE SIDED SILICON DETECTORS;
EQUIVALENT NOISE CHARGE;
CAPACITANCE;
CAPACITORS;
ELECTRIC RESISTANCE;
ELECTRODES;
ELECTROSTATICS;
LEAKAGE CURRENTS;
MATHEMATICAL MODELS;
SEMICONDUCTOR DEVICE STRUCTURES;
SPURIOUS SIGNAL NOISE;
SILICON SENSORS;
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EID: 0028494326
PISSN: 00189499
EISSN: 15581578
Source Type: Journal
DOI: 10.1109/23.322811 Document Type: Article |
Times cited : (10)
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References (16)
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